Tokyo, Japan

Ryuusei Fujita

USPTO Granted Patents = 5 

Average Co-Inventor Count = 3.2

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2018-2022

where 'Filed Patents' based on already Granted Patents

5 patents (USPTO):

Title: Ryuusei Fujita: Innovator in Power Module Technology

Introduction

Ryuusei Fujita is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of power module technology, holding a total of five patents. His work focuses on improving the reliability and efficiency of power modules and converters.

Latest Patents

Fujita's latest patents include innovations aimed at enhancing dielectric breakdown resistance in power modules. One notable patent describes a power module that incorporates a SiC-IGBT and a SiC diode, with a resin layer covering the electric field relaxation region. This design ensures that the film thickness of the resin layer exceeds the chip thickness of the SiC-IGBT, specifically 200 micrometers or more. Another patent addresses the reliability of power modules and converters by utilizing two parallel switching devices, each consisting of a diode and a transistor. This configuration is designed to extend the lifespan of the devices.

Career Highlights

Ryuusei Fujita is currently employed at Hitachi, Ltd., where he continues to develop innovative solutions in power electronics. His expertise in semiconductor technology has positioned him as a key figure in advancing the capabilities of power modules.

Collaborations

Fujita collaborates with notable colleagues, including Akio Shima and Satoru Akiyama. Their combined efforts contribute to the ongoing research and development in the field of power electronics.

Conclusion

Ryuusei Fujita's contributions to power module technology reflect his commitment to innovation and reliability. His patents demonstrate a clear focus on enhancing the performance and longevity of power electronic devices.

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