The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2019
Filed:
Jul. 02, 2018
Applicant:
Hitachi, Ltd., Tokyo, JP;
Inventors:
Kumiko Konishi, Tokyo, JP;
Ryuusei Fujita, Tokyo, JP;
Kazuki Tani, Tokyo, JP;
Akio Shima, Tokyo, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7805 (2013.01); H01L 29/1608 (2013.01);
Abstract
Provided is a silicon carbide semiconductor device in which SiC-MOSFETs are formed within an active region of an n-type silicon carbide semiconductor substrate, and a p-type semiconductor region is formed on an upper surface of an epitaxial layer so as to surround the active region.