The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2022
Filed:
Oct. 02, 2017
Applicant:
Hitachi, Ltd., Tokyo, JP;
Inventors:
Assignee:
HITACHI, LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 25/07 (2006.01); H01L 29/739 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 25/072 (2013.01); H01L 29/7393 (2013.01); H01L 29/861 (2013.01);
Abstract
Dielectric breakdown resistance of a power module including a SiC-IGBT and a SiC diode is improved. The power module includes a SiC-IGBTand a SiC diode, and a film thickness of a resin layercovering an upper portion of an electric field relaxation regionof the SiC-IGBTis larger than a chip thickness of the SiC-IGBT, that is, for example, 200 μm or more.