Nagasaki, Japan

Ryusei Naito

USPTO Granted Patents = 7 

 

Average Co-Inventor Count = 4.7

ph-index = 4

Forward Citations = 75(Granted Patents)


Location History:

  • Kanagawa, JP (2018 - 2019)
  • Nagasaki, JP (2019 - 2024)

Company Filing History:


Years Active: 2018-2025

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7 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Ryusei Naito

Introduction

Ryusei Naito is a prominent inventor based in Nagasaki, Japan. He has made significant contributions to the field of photodetection technology, holding a total of seven patents. His work is characterized by a focus on enhancing the efficiency and functionality of sensors.

Latest Patents

One of Ryusei Naito's latest patents involves a photodetector that includes a first substrate with at least one pixel. This pixel features an avalanche photodiode designed to convert incident light into electric charge. The design includes an anode and a cathode, with the cathode situated in a well region of the substrate. Additionally, the pixel incorporates an isolation region that separates the well region from an adjacent second pixel. A hole accumulation region is also present, positioned between the isolation region and the well region, and is electrically connected to the anode.

Career Highlights

Ryusei Naito is currently employed at Sony Semiconductor Solutions Corporation, where he continues to innovate in the field of semiconductor technology. His work has been instrumental in advancing the capabilities of photodetectors, making them more efficient and reliable.

Collaborations

Ryusei has collaborated with notable coworkers, including Yusuke Otake and Akira Matsumoto. Their combined expertise has contributed to the successful development of various technologies within their field.

Conclusion

Ryusei Naito's contributions to photodetection technology exemplify the spirit of innovation. His patents and work at Sony Semiconductor Solutions Corporation highlight his commitment to advancing technology in meaningful ways.

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