Kawasaki, Japan

Ryuji Ooba


Average Co-Inventor Count = 5.0

ph-index = 2

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 2011-2012

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2 patents (USPTO):

Title: The Innovations of Ryuji Ooba: A Pioneer in Nonvolatile Semiconductor Memory Devices

Introduction: Ryuji Ooba, an inventive mind based in Kawasaki, Japan, has contributed significantly to the field of semiconductor technology. With two registered patents to his name, Ooba's work primarily focuses on nonvolatile semiconductor memory devices, showcasing his ability to blend creativity with technical expertise.

Latest Patents: Ooba's most recent patents revolve around the development of nonvolatile semiconductor memory devices. One notable patent details a nonvolatile semiconductor memory device that features a uniquely structured gate portion. This gate is formed by layering a tunnel insulating film, floating gate electrode, inter-poly insulating film, and control gate electrode on a semiconductor substrate, while also incorporating source and drain regions. The tunnel insulating film in this design boasts a sophisticated three-layered structure comprising a silicon nitride film sandwiched between silicon oxide films. Notably, this silicon nitride film exhibits continuity in its in-plane direction, characterized by 3-coordinate nitrogen bonds, where at least one nitrogen atom among its second neighboring atoms is also nitrogen.

Career Highlights: Ryuji Ooba works for Kabushiki Kaisha Toshiba, a leading corporation in technology and innovation. His tenure at Toshiba has been marked by his commitment to advancing semiconductor technologies and his contributions to creating reliable memory storage solutions. His two patents reflect his deep understanding of the intricate processes involved in semiconductor manufacturing.

Collaborations: Throughout his career, Ooba has collaborated with talented professionals such as Yuuichiro Mitani and Daisuke Matsushita. These partnerships have allowed him to enhance his innovative projects and more efficiently address the challenges in the semiconductor field.

Conclusion: Ryuji Ooba is a notable inventor whose contributions to nonvolatile semiconductor memory devices are significant. His patents not only exhibit his technical prowess but also pave the way for advancements in semiconductor technology, enhancing the reliability and performance of memory devices. Ooba’s work serves as an inspiration in the innovation landscape, highlighting the importance of collaboration and creativity in technology development.

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