The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2011
Filed:
Jul. 24, 2006
Yuuichiro Mitani, Miura-gun, JP;
Daisuke Matsushita, Hiratsuka, JP;
Ryuji Ooba, Kawasaki, JP;
Isao Kamioka, Machida, JP;
Yoshio Ozawa, Yokohama, JP;
Yuuichiro Mitani, Miura-gun, JP;
Daisuke Matsushita, Hiratsuka, JP;
Ryuji Ooba, Kawasaki, JP;
Isao Kamioka, Machida, JP;
Yoshio Ozawa, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A nonvolatile semiconductor memory device includes a gate portion formed by laminating a tunnel insulating film, floating gate electrode, inter-poly insulating film and control gate electrode on a semiconductor substrate, and source and drain regions formed on the substrate. The tunnel insulating film has a three-layered structure having a silicon nitride film sandwiched between silicon oxide films. The silicon nitride film is continuous in an in-plane direction and has 3-coordinate nitrogen bonds and at least one of second neighboring atoms of nitrogen is nitrogen.