Aizuwakamatsu, Japan

Ryuji Omi

This inventor holds 1 USPTO granted patent. Top assignee: Semiconductor Components Industries, LLC. Active years: 2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ryuji Omi. Retrieved from https://idiyas.com/inventor/ryuji-omi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2009

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1 patent (USPTO):Explore Patents

Title: Ryuji Omi: Innovator in Semiconductor Technology

Introduction

Ryuji Omi is a notable inventor based in Aizuwakamatsu, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device that enhances performance and reliability.

Latest Patents

Ryuji Omi holds 1 patent for a semiconductor device featuring a field stabilization film. This invention includes a high voltage semiconductor device that is formed with a first dielectric layer and a charge stabilization layer made of flowable glass. This design aims to improve the efficiency and stability of semiconductor devices.

Career Highlights

Ryuji Omi is currently employed at Semiconductor Components Industries, LLC, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the capabilities of high voltage devices.

Collaborations

Throughout his career, Ryuji has collaborated with esteemed colleagues, including Takeshi Ishiguro and Shanghui Larry Tu. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Ryuji Omi's contributions to semiconductor technology exemplify the spirit of innovation. His patent and ongoing work at Semiconductor Components Industries, LLC highlight his commitment to advancing the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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