The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2009
Filed:
Apr. 07, 2005
Applicants:
Shanghui Larry Tu, Phoenix, AZ (US);
Takeshi Ishiguro, Aizuwakamatsu, JP;
Fumika Kuramae, Aizuwakamatsu, JP;
Ryuji Omi, Aizuwakamatsu, JP;
Inventors:
Shanghui Larry Tu, Phoenix, AZ (US);
Takeshi Ishiguro, Aizuwakamatsu, JP;
Fumika Kuramae, Aizuwakamatsu, JP;
Ryuji Omi, Aizuwakamatsu, JP;
Assignee:
Semiconductor Components Industries, LLC, Phoenix, AZ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/469 (2006.01);
U.S. Cl.
CPC ...
Abstract
In one embodiment, a high voltage semiconductor device is formed with a first dielectric layer and a charge stabilization layer comprising a flowable glass formed over the first dielectric layer.