Shisui, Japan

Ryuichi Nakano

This inventor holds 1 USPTO granted patent. Top assignee: Miraial Co., Ltd.. Active years: 2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ryuichi Nakano. Retrieved from https://idiyas.com/inventor/ryuichi-nakano-52j73fvx

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2008

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1 patent (USPTO):Explore Patents

Title: Ryuichi Nakano: Innovator in Semiconductor Technology

Introduction

Ryuichi Nakano is a notable inventor based in Shisui-machi, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the area of gas replacement in storage containers.

Latest Patents

Ryuichi Nakano holds a patent for an "Apparatus for replacing gas in storage container and method for replacing gas therewith." This innovative apparatus allows for the rapid replacement of gas in a general storage container without a gas inlet, while simultaneously cleaning the surface of semiconductor wafers. The design includes a lid unit and a storage container main body equipped with a gas inlet. It features gas introducing means for injecting gas into the storage container, gas evacuating means for removing gas, and gas circulating means that utilize a chemical adsorption filter to maintain gas quality.

Career Highlights

Ryuichi Nakano is associated with Miraial Co., Ltd., where he has been instrumental in advancing semiconductor storage technologies. His work has been pivotal in enhancing the efficiency and effectiveness of gas replacement processes in semiconductor manufacturing.

Collaborations

He has collaborated with notable colleagues such as Yukihiro Hyobu and Yoshihisa Okamoto, contributing to various projects that aim to improve semiconductor technologies.

Conclusion

Ryuichi Nakano's innovative work in semiconductor technology, particularly his patented apparatus for gas replacement, showcases his commitment to advancing the field. His contributions continue to influence the efficiency of semiconductor manufacturing processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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