Matsumoto-city, Japan

Ryouichi Kawano

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Fuji Electric., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ryouichi Kawano. Retrieved from https://idiyas.com/inventor/ryouichi-kawano-b2lj60g1

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Ryouichi Kawano: Innovator in Semiconductor Technology

Introduction

Ryouichi Kawano is a prominent inventor based in Matsumoto-city, Japan. He has made significant contributions to the field of semiconductor technology, showcasing his expertise through innovative designs and methods.

Latest Patents

Kawano holds a patent for a semiconductor device and method of manufacturing the same. This invention includes a semiconductor substrate of a first conductivity-type, an insulated gate electrode structure buried in a first trench, and a base region of a second conductivity-type. The design also features a first main electrode region, a polysilicon film of the second conductivity-type, and a second main electrode region, all working together to enhance the performance of semiconductor devices. He has 1 patent to his name.

Career Highlights

Kawano is currently associated with Fuji Electric, Ltd., where he continues to develop and refine semiconductor technologies. His work has been instrumental in advancing the capabilities of semiconductor devices, making them more efficient and reliable.

Conclusion

Ryouichi Kawano's contributions to semiconductor technology reflect his dedication to innovation and excellence in the field. His patent serves as a testament to his skills and the impact he has made in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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