Funabashi, Japan

Ryosuke Sugiura

This inventor holds 1 USPTO granted patent. Top assignees: Asahi Glass Company, Limited, Asahi Techno Glass Corporation. Active years: 2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ryosuke Sugiura. Retrieved from https://idiyas.com/inventor/ryosuke-sugiura-2pcg3dqq

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2010

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1 patent (USPTO):Explore Patents

Title: Ryosuke Sugiura: Innovator in Substrate Production

Introduction

Ryosuke Sugiura is a notable inventor based in Funabashi, Japan. He has made significant contributions to the field of substrate production, particularly through his innovative patent that addresses the challenges of printability in conductive patterns.

Latest Patents

Sugiura holds a patent for a process for producing a reliable substrate with improved yield. This process effectively suppresses the bleeding of boric acid from a green sheet made of borosilicate glass powder. By enhancing the printability of conductive patterns, his invention helps prevent disconnection in electronic applications.

Career Highlights

Throughout his career, Sugiura has worked with prominent companies such as Asahi Glass Company, Limited and Asahi Techno Glass Corporation. His experience in these organizations has allowed him to refine his expertise in materials science and substrate technology.

Collaborations

Sugiura has collaborated with notable colleagues, including Jiro Chiba and Atsuo Hiroi. These partnerships have contributed to the advancement of his research and innovations in substrate production.

Conclusion

Ryosuke Sugiura's work in developing a reliable substrate production process showcases his commitment to innovation in materials science. His contributions continue to impact the field positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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