Kudamatsu, Japan

Ryooji Fukuyama

This inventor holds 23 USPTO granted patents, primarily in Plasma Processing. Top assignee: Hitachi, Ltd.. Active years: 1990-2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ryooji Fukuyama. Retrieved from https://idiyas.com/inventor/ryooji-fukuyama

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 69.6

Average Co-Inventor Count = 6.1

ph-index = 7

Forward Citations = 229(Granted Patents)


Company Filing History:


Years Active: 1990-2008

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Areas of Expertise:
Etching Method
Organic Insulating Film
Sample Processing
Plasma Etching
Microwave Plasma
Residual Corrosive Compounds
Plasma-Processing Apparatus
Metal Laminate
Sample Treatment
Processing Techniques
Method for Treating Samples
Apparatus for Processing
23 patents (USPTO):Explore Patents

Title: Innovations by Ryooji Fukuyama: A Pioneering Inventor in Semiconductor Technology

Introduction

Ryooji Fukuyama, based in Kudamatsu, Japan, is a prominent inventor known for his contributions to semiconductor technology. With an impressive portfolio of 23 patents to his name, Ryooji has significantly impacted the way organic insulating films are processed in semiconductor devices.

Latest Patents

Two of Ryooji Fukuyama's latest patent innovations include:

1. **Etching Method of Organic Insulating Film** - This invention pertains to a novel method for etching an organic insulating film utilized in the fabrication of semiconductor devices. The process involves generating a plasma from hydrogen gas and nitrogen or ammonia gas. By meticulously controlling the gas flow rate and pressure, the method achieves a prescribed light emission spectral intensity ratio of hydrogen atoms to cyan molecules. As a result, it facilitates the etching of a low dielectric constant organic insulating film without the need for an etch stop layer, ensuring that the bottom surfaces of trenches and holes for electrical wiring are perfectly flat.

2. **Method and Apparatus for Processing Samples** - This patent discloses an innovative apparatus designed for treating samples. The invention includes multiple components: a processing apparatus for sample treatment (such as plasma etching), a mechanism for eliminating residual corrosive compounds generated during treatment, and options for both wet and dry processing of samples. This apparatus can accommodate multiple wet-processing treatments, allowing samples to move either in series or parallel through various stations, thereby enhancing the efficiency of sample processing.

Career Highlights

Throughout his career at Hitachi, Ltd., Ryooji Fukuyama has continuously pursued innovations that enhance semiconductor manufacturing. His technical expertise and dedication to research have enabled the development of advanced technologies critical to the industry.

Collaborations

Ryooji has collaborated with notable colleagues such as Hironobu Kawahara and Yoshiaki Sato. Their combined efforts have led to significant advancements in the field and have fostered a collaborative environment aimed at driving innovation in semiconductor technology.

Conclusion

Ryooji Fukuyama's contributions to semiconductor technology through his inventive patents demonstrate his role as a leading figure in the industry. As he continues to innovate, his work not only propels advancements in electronics but also sets a precedent for future developments in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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