The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2001
Filed:
Mar. 18, 1994
Applicant:
Inventors:
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/13065 ;
U.S. Cl.
CPC ...
H01L 2/13065 ;
Abstract
A plasma-etching apparatus is capable of etching a film of a workpiece with a plasma produced in an evacuated etching chamber at a high etch selectivity relative to an underlying film or a resist film. The frequency of a RF bias voltage applied to a sample table by a RF power source is adjusted so that the ion energy of the plasma is distributed in a saddle-peak energy distribution pattern. The film is etched at a high etch selectivity relative to a material having a threshold ion energy.
Ohmoto, Yutaka. (2001). Plasma-processing method and an apparatus for carrying out the same (U.S. Patent No. 6328845). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6328845
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