Ryoichi Ohno

Title: Ryoichi Ohno: Innovator in Semiconductor Technology

Introduction

Ryoichi Ohno is a notable inventor based in Gushikawa, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of radiation detectors. His innovative work has led to the filing of a patent that showcases his expertise and creativity in this specialized area.

Latest Patents

Ryoichi Ohno holds a patent for a semiconductor radiation detector that features voltage application means. This invention comprises InxCdyTez on a CdTe semiconductor substrate. The patent describes a semiconductor radiation detector element of Schottky barrier type, which includes a compound semiconductor crystal with cadmium and tellurium as its main components. The voltage application means is designed to apply voltage to the compound semiconductor crystal, enhancing its functionality. The compound of indium, cadmium, and tellurium, InCdTe, is formed on one surface of the compound semiconductor crystal. The invention specifies that the rate 'z' of tellurium in InCdTe should be between 42.9% and 50% by the ratio of the number of atoms, while the rate 'y' of cadmium should be between 0% and 10%.

Career Highlights

Ryoichi Ohno is currently associated with Acrorad Co., Ltd., where he continues to innovate in the semiconductor field. His work has been instrumental in advancing the technology used in radiation detection, making significant strides in the industry.

Collaborations

Ryoichi Ohno has collaborated with notable colleagues, including Miki Moriyama and Masaki Murakami. These partnerships have contributed to the development of cutting-edge technologies in semiconductor applications.

Conclusion

Ryoichi Ohno's contributions to semiconductor technology, particularly through his patented innovations, highlight his role as a leading inventor in the field. His work continues to influence advancements in radiation detection and semiconductor applications.