The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2005
Filed:
Oct. 29, 2003
Miki Moriyama, Kyoto, JP;
Masaki Murakami, Kyoto, JP;
Atsushi Kyan, Gushikawa, JP;
Ryoichi Ohno, Gushikawa, JP;
Miki Moriyama, Kyoto, JP;
Masaki Murakami, Kyoto, JP;
Atsushi Kyan, Gushikawa, JP;
Ryoichi Ohno, Gushikawa, JP;
Acrorad Co., Ltd., Okinawa, JP;
Abstract
Disclosed is a semiconductor radiation detector element of Schottky barrier type, comprising: a compound semiconductor crystal including cadmium and tellurium as main components; and voltage application means for applying voltage to the compound semiconductor crystal. According to the present invention, said voltage application means includes a compound of indium, cadmium and tellurium: InCdTeformed on one surface of the compound semiconductor crystal. Preferably, the rate 'z' of occupation of tellurium in the compound InCdTeis in the range of not less than 42.9%, but not greater than 50% by ratio of number of atoms. Furthermore, preferably, the rate 'y' of occupation of cadmium in the compound InCdTeis in the range of not less than 0%, but not greater than 10% by ratio of number of atoms.