Kanagawa, Japan

Ryohsuke Shimizu

This inventor holds 1 USPTO granted patent. Top assignees: Fuji Electric Holdings Co., Ltd., Shin-Etsu Handotai Co., Ltd.. Active years: 2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ryohsuke Shimizu. Retrieved from https://idiyas.com/inventor/ryohsuke-shimizu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 26(Granted Patents)


Company Filing History:


Years Active: 2006

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1 patent (USPTO):Explore Patents

Title: Ryohsuke Shimizu: Innovator in Semiconductor Fabrication

Introduction

Ryohsuke Shimizu is a notable inventor based in Kanagawa, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative fabrication methods.

Latest Patents

Shimizu holds a patent for a fabrication method of a semiconductor wafer. This method allows for the filling of trenches formed in a semiconductor substrate with an epitaxial film of high crystal quality, without leaving cavities in the trenches. The process involves cleaning the surfaces inside the trenches and etching them to create a suitable environment for the growth of a second conductivity type semiconductor.

Career Highlights

Throughout his career, Ryohsuke Shimizu has worked with prominent companies such as Shin-Etsu Handotai Co., Ltd. and Fuji Electric Holdings Co., Ltd. His experience in these organizations has contributed to his expertise in semiconductor fabrication.

Collaborations

Shimizu has collaborated with notable colleagues, including Daisuke Kishimoto and Katsunori Ueno. These partnerships have further enhanced his work in the semiconductor industry.

Conclusion

Ryohsuke Shimizu's innovative approach to semiconductor wafer fabrication has made a lasting impact on the industry. His patent and collaborations reflect his dedication to advancing technology in this critical field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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