Nirasaki, Japan

Ryohei Yoneda

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Tokyo Electron Limited. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ryohei Yoneda. Retrieved from https://idiyas.com/inventor/ryohei-yoneda

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Ryohei Yoneda: Innovator in Substrate Processing Technology

Introduction

Ryohei Yoneda is a notable inventor based in Nirasaki, Japan. He has made significant contributions to the field of substrate processing technology. His innovative work has led to the development of a unique substrate processing apparatus.

Latest Patents

Ryohei Yoneda holds a patent for a substrate processing apparatus. This apparatus includes a processing container, a stage for placing a substrate, an exhaust port, a driver for moving the stage, a clamp ring, and a pressure regulating mechanism. The design aims to enhance the efficiency and effectiveness of substrate processing.

Career Highlights

Ryohei Yoneda is associated with Tokyo Electron Limited, a leading company in the semiconductor manufacturing equipment industry. His work at the company has been instrumental in advancing substrate processing technologies. He has a total of 1 patent to his name, showcasing his innovative capabilities.

Collaborations

Throughout his career, Ryohei has collaborated with talented individuals such as Naoki Umehara and Syuji Nozawa. These collaborations have contributed to the development of cutting-edge technologies in the field.

Conclusion

Ryohei Yoneda's contributions to substrate processing technology highlight his role as an innovator in the industry. His patent and collaborations reflect his commitment to advancing technology in semiconductor manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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