Tokyo, Japan

Ryo Obara

This inventor holds 1 USPTO granted patent. Top assignee: Mitsubishi Denki Kabushiki Kaisha. Active years: 1998.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ryo Obara. Retrieved from https://idiyas.com/inventor/ryo-obara-iwuut4cd

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 1998

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1 patent (USPTO):Explore Patents

Title: Innovations of Ryo Obara in Semiconductor Technology

Introduction: Ryo Obara, a prominent inventor based in Tokyo, Japan, has made significant contributions to semiconductor technology. With a focus on enhancing measurement techniques within the industry, Ryo has secured a patent that showcases his innovative approach to measuring semiconductor devices.

Latest Patents: Ryo Obara holds a patent for a method of measuring a semiconductor device, specifically in the process of forming a capacitor. This method involves successively layering a dielectric film and an opposed electrode above the charge storing electrode, which features an irregular shape. The innovative aspect of this patent lies in its unique approach to measuring the effective area of the capacitor using an atomic force microscope, ensuring precision in the formation of capacitors.

Career Highlights: Ryo currently works with Mitsubishi Electric Corporation, where he applies his expertise in semiconductor device measurement and development. His career has been characterized by a commitment to innovation and the advancement of technology in the semiconductor field.

Collaborations: Throughout his career, Ryo has collaborated with talented individuals, including his coworker, Tomoaki Ishida. Their teamwork has allowed them to push the boundaries of semiconductor research and development, further solidifying their impact on the industry.

Conclusion: Ryo Obara's contributions to the field of semiconductor technology underscore the importance of innovative thinking in advancing measurement techniques. His patented method not only enhances the process of forming capacitors but also reflects his dedication to improving semiconductor devices through meticulous research and collaboration.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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