The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 1998
Filed:
May. 23, 1997
Applicant:
Inventors:
Tomoaki Ishida, Tokyo, JP;
Ryo Obara, Tokyo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438398 ; 438255 ; 438964 ;
Abstract
A method of measuring a semiconductor device in forming a capacitor by successively laminating a dielectric film and an opposed electrode above an upper face of a charge storing electrode a surface of which is formed in an irregular shaper, including the steps of forming the irregular shape of the charge storing electrode and measuring an area of the charge storing electrode which is to constitute an effective area of the capacitor by an atomic force microscope.