This inventor holds 3 USPTO granted patents. Top assignees: International Business Machines Corporation, Samsung Electronics Co., Ltd.. Active years: 2011-2014.
IDiyas Innovation Intelligence. (2026). Inventor Profile: Ryan L Burns. Retrieved from https://idiyas.com/inventor/ryan-l-burns
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
% Patents Active = 33.3
Average Co-Inventor Count = 2.3
ph-index = 1
Forward Citations = 3(Granted Patents)
Location History:
- Fishkill, NY (US) (2011)
- Hopewell Junction, NY (US) (2012)
- Wappingers Falls, NY (US) (2014)
Company Filing History:
3 out of 166,325 
International Business Machines Corporation
1 out of 132,108 
Samsung Electronics Co., Ltd.
where one patent can have more than one assignee
Years Active: 2011-2014
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3 patents (USPTO):Explore Patents
Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
IDiyas Innovation Intelligence. (2026). Inventor Profile: Ryan L Burns. Retrieved from https://idiyas.com/inventor/ryan-l-burns
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]