The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 05, 2014

Filed:

Feb. 15, 2012
Applicants:

Chang-hwa Kim, Hwaseong-si, KR;

Ryan L. Burns, Wappingers Falls, NY (US);

Inventors:

Chang-Hwa Kim, Hwaseong-si, KR;

Ryan L. Burns, Wappingers Falls, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods of forming integrated circuit devices include forming first and second electrically conductive lines at side-by-side locations on an integrated circuit substrate. Steps are performed to selectively etch each of the first and second electrically conductive lines into a respective pair of interconnects having facing ends that are separated from each other. This selective etching step is performed using a photolithography mask having a modified-rectangular mask pattern thereon, which is configured to define a shape of the facing ends of each of the pair of interconnects.


Find Patent Forward Citations

Kim, Chang-Hwa. (2014). Methods of forming integrated circuit devices using modified rectangular mask patterns to increase reliability of contacts to electrically conductive lines (U.S. Patent No. 8796134). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8796134

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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