Plainview, NY, United States of America

Rutvik J Mehta

This inventor holds 2 USPTO granted patents and 2 published patent applications. Top assignee: Veeco Instruments Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Rutvik J Mehta. Retrieved from https://idiyas.com/inventor/rutvik-j-mehta-p9kmhvdm

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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USPTO Granted Patents = 2 

% Patents Active = 100.0

Average Co-Inventor Count = 4.8

ph-index = 1


Company Filing History:


Years Active: 2026

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2 patents (USPTO):Explore Patents

Title: Innovations by Rutvik J Mehta

Introduction

Rutvik J Mehta is a notable inventor based in Plainview, NY (US). He has made significant contributions to the field of thin film technology, particularly in the deposition of low resistivity metals. With a total of 2 patents to his name, Mehta's work is recognized for its innovative approaches and practical applications.

Latest Patents

Mehta's latest patents include methods for ion beam deposition of ruthenium thin films. These methods focus on forming low resistivity ruthenium (Ru) thin films by depositing ruthenium onto a substrate via ion beam deposition. The process occurs in a chamber containing reactive and noble gas species, with the substrate maintained at a temperature of at least 250° C. The resulting thin ruthenium film exhibits a thickness of no more than 30 nm and a resistivity of less than 12 μ·cm. Additionally, the crystalline structure of the film comprises grains with a (0001) orientation. The resistivity varies with thickness, demonstrating values less than 9 μΩ-cm for films of 50 nm and thicker, and less than 20 μΩ-cm for films of 2 nm and thicker.

Another significant patent involves the ion beam deposition of low resistivity metals, including tungsten (W) and ruthenium (Ru). This method also utilizes ion beam deposition at a temperature of at least 250° C. The resulting thin tungsten film features large and highly oriented α(110) grains with a resistivity of less than 10 μΩ-cm and a thickness of less than 300 Å. Similarly, the thin ruthenium film produced through this method has a resistivity of less than 12 μΩ-cm and a thickness of less than 300 Å.

Career Highlights

Rutvik J Mehta is currently employed at Veeco Instruments Inc., where he continues to advance his research and development in thin film technologies. His work has contributed to the understanding and application of low resistivity materials in various industries.

Collaborations

Mehta has collaborated with notable coworkers, including Yuejing Wang and Frank Cerio, who have contributed to his research endeavors.

Conclusion

Rutvik J Mehta's innovative work in the field of thin film technology, particularly in the deposition of low resist

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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