Company Filing History:
1 out of 54 
1 out of 54 Years Active: 2021
Title: Ruoyuan Li: Innovator in Semiconductor Technology
Introduction
Ruoyuan Li is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor structure and its forming method.
Latest Patents
Ruoyuan Li holds 1 patent for his invention titled "Semiconductor structure and forming method thereof." This patent provides a detailed method for forming a semiconductor structure, which includes providing a base, forming multiple spaced filling layers, etching the base to create independent fin portions, and etching the filling layers to form independent pseudofin portions. The semiconductor structure includes a substrate with device areas and isolating areas, where the fin portions are located in the device areas and are made of the same material as the substrate.
Career Highlights
Throughout his career, Ruoyuan Li has worked with notable companies in the semiconductor industry. He has been associated with Semiconductor Manufacturing International Corporation in Shanghai and Semiconductor Manufacturing International Corporation in Beijing. His experience in these organizations has contributed to his expertise in semiconductor technology.
Collaborations
Ruoyuan Li has collaborated with various professionals in his field, including his coworker Nan Wang. Their joint efforts have further advanced the development of semiconductor technologies.
Conclusion
Ruoyuan Li's contributions to semiconductor technology through his innovative patent and career achievements highlight his role as a key figure in the industry. His work continues to influence advancements in semiconductor structures and methods.