The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2021
Filed:
Jul. 02, 2019
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Nan Wang, Shanghai, CN;
Ruoyuan Li, Shanghai, CN;
Abstract
The present disclosure provides a semiconductor structure and a method for forming a semiconductor structure. In one form, a method for forming a semiconductor structure includes: providing a base; forming multiple spaced filling layers in the base; etching the base to form multiple independent fin portions; and etching the filling layers to form multiple independent pseudofin portions. In one form a semiconductor structure of the present disclosure includes: a substrate, multiple independent fin portions and multiple independent pseudofin portions, wherein the substrate includes device areas, and isolating areas located between the device areas; the multiple independent fin portions are located on the substrate in the device areas and are the same with the substrate in material; and the multiple independent pseudofin portions are located on the substrate in the isolating areas and are different from the substrate in material.