Shanghai, China

Runzhang Xie

USPTO Granted Patents = 1 

Average Co-Inventor Count = 11.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Runzhang Xie: Innovator in Van der Waals Infrared Photodetectors

Introduction

Runzhang Xie is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of infrared photodetectors, particularly through his innovative work on van der Waals materials. His research focuses on enhancing the performance and efficiency of photodetectors, which are crucial for various applications in sensing and imaging technologies.

Latest Patents

Runzhang Xie holds a patent for a "Momentum-matching and band-alignment van der Waals (vdW) infrared photodetector and fabrication method thereof." This patent describes a novel photodetector that includes a substrate, a dielectric layer, a BiOSe layer, a black phosphorus (BP) layer, a metal source, and a metal drain. The fabrication method involves transferring the BiOSe layer onto a substrate with a dielectric layer and subsequently placing the BP layer onto the BiOSe layer. The process also includes fabricating the metal source and drain using techniques such as electron beam exposure and evaporation, resulting in a vertical structure that enhances the photodetector's performance.

Career Highlights

Runzhang Xie is affiliated with the Chinese Academy of Sciences, where he conducts his research and development activities. His work has garnered attention for its innovative approach to utilizing van der Waals materials in photodetector technology. With a focus on practical applications, Xie's contributions are paving the way for advancements in infrared detection.

Collaborations

Runzhang Xie has collaborated with notable colleagues, including Weida Hu and Zhen Wang. These collaborations have further enriched his research and have led to significant advancements in the field of photodetectors.

Conclusion

Runzhang Xie's innovative work in the development of van der Waals infrared photodetectors exemplifies the potential of new materials in enhancing technology. His contributions are vital for the future of sensing and imaging applications.

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