The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2024
Filed:
Jun. 24, 2022
Shanghai Institute of Technical Physics of the Chinese Academy of Sciences, Shanghai, CN;
Weida Hu, Shanghai, CN;
Zhen Wang, Shanghai, CN;
Yunfeng Chen, Shanghai, CN;
Jinshui Miao, Shanghai, CN;
Peng Wang, Shanghai, CN;
Fang Zhong, Shanghai, CN;
Ting He, Shanghai, CN;
Runzhang Xie, Shanghai, CN;
Fang Wang, Shanghai, CN;
Xiaoshuang Chen, Shanghai, CN;
Wei Lu, Shanghai, CN;
Abstract
The present disclosure provides a momentum-matching and band-alignment van der Waals (vdW) infrared photodetector and a fabrication method thereof. The photodetector includes a substrate, a dielectric layer, a BiOSe layer, a black phosphorus (BP) layer, a metal source and a metal drain. The fabrication method includes: transferring, in a wet manner, the BiOSe layer grown on the mica substrate onto the substrate having the dielectric layer, transferring the mechanically exfoliated BP layer through a micro-region fixed-point transfer device onto the BiOSe layer, and separately fabricating the metal source and the metal drain on the BiOSe layer and the BP layer by processes such as electron beam exposure and electron beam evaporation, thereby forming the momentum-matching and band-alignment vdW infrared photodetector having a vertical structure.