Shanghai, China

Jinshui Miao

USPTO Granted Patents = 1 

Average Co-Inventor Count = 11.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Jinshui Miao: Innovator in Infrared Photodetector Technology

Introduction

Jinshui Miao is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of infrared photodetectors, showcasing his innovative spirit and technical expertise. His work is particularly focused on the development of advanced materials and fabrication methods.

Latest Patents

Jinshui Miao holds a patent for a "Momentum-matching and band-alignment van der Waals (vdW) infrared photodetector and fabrication method thereof." This invention provides a novel approach to infrared photodetection, incorporating a substrate, a dielectric layer, a BiOSe layer, a black phosphorus (BP) layer, and metal source and drain components. The fabrication method involves a series of precise steps, including the wet transfer of the BiOSe layer and the mechanical exfoliation of the BP layer, ultimately resulting in a vertical structure that enhances performance.

Career Highlights

Jinshui Miao is affiliated with the Chinese Academy of Sciences, where he continues to push the boundaries of research and innovation. His work has garnered attention for its potential applications in various technological fields, particularly in improving infrared detection capabilities.

Collaborations

Throughout his career, Jinshui Miao has collaborated with notable colleagues, including Weida Hu and Zhen Wang. These partnerships have contributed to the advancement of his research and the successful development of his patented technologies.

Conclusion

Jinshui Miao's contributions to the field of infrared photodetectors exemplify the impact of innovative thinking in technology. His work not only advances scientific knowledge but also paves the way for future developments in the industry.

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