Ruishan Li

Title: Ruishan Li: Innovator in Two-Dimensional Materials

Introduction

Ruishan Li is a prominent inventor based in Beijing, China. He has made significant contributions to the field of materials science, particularly in the development of two-dimensional materials. His innovative work has garnered attention in both academic and industrial circles.

Latest Patents

Ruishan Li holds a patent for the "Preparation method and use of two-dimensional MoS2 materials." This patent outlines a novel preparation method that utilizes molybdenum source and sulfur powder as raw materials, with inert gas serving as the carrier gas. The process involves an intermediate evaporation stage, where the raw materials are transported to a molten glass surface and deposited into solid molybdenum sulfide. Through a series of etching, spreading, sulfurization, and precipitation processes, ultra-high quality and large area MoS2 single-crystal domains are produced. The resulting single-crystal domain size can reach 1.5 cm, which can further grow into a wafer-level 2D MoS2 material measuring 2 inches in size and 1-2 layers in thickness.

Career Highlights

Ruishan Li is affiliated with the University of Science and Technology Beijing, where he conducts research and development in advanced materials. His work has positioned him as a leading figure in the exploration of two-dimensional materials, which have applications in various technological fields.

Collaborations

Ruishan Li collaborates with notable colleagues, including Yue Zhang and He Jiang. Their combined expertise enhances the research output and innovation potential within their projects.

Conclusion

Ruishan Li's contributions to the field of two-dimensional materials exemplify the impact of innovative research on technology. His patent on MoS2 materials showcases his commitment to advancing material science and its applications.