The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
Apr. 16, 2025
University of Science and Technology Beijing, Beijing, CN;
Yue Zhang, Beijing, CN;
He Jiang, Beijing, CN;
Zheng Zhang, Beijing, CN;
Xiankun Zhang, Beijing, CN;
Kuanglei Chen, Beijing, CN;
Xiaoyu He, Beijing, CN;
Yihe Liu, Beijing, CN;
Ruishan Li, Beijing, CN;
Yu Geng, Beijing, CN;
Chao Chen, Beijing, CN;
University of Science and Technology Beijing, Beijing, CN;
Abstract
A preparation method and a use of 2D MoSmaterials are provided. Molybdenum source and sulfur powder are used as raw materials, and inert gas is used as carrier gas. Through an intermediate evaporation process, the raw materials are transported to the molten glass surface and deposited into solid molybdenum sulfide. In the subsequent etching-spreading-sulfurization-precipitation process, ultra-high quality and ultra-large area MoSsingle-crystal domains are obtained under normal pressure and without hydrogenation. The single-crystal domain size of the prepared 2D MoSmaterial can reach 1.5 cm, and then grow into a wafer-level 2D MoSmaterial with a size of 2 inches and a thickness of 1-2 layers.