Kuanglei Chen

Title: Kuanglei Chen: Innovator in Two-Dimensional Materials

Introduction

Kuanglei Chen is a prominent inventor based in Beijing, China. He has made significant contributions to the field of materials science, particularly in the development of two-dimensional materials. His innovative work has led to advancements that could have a profound impact on various technological applications.

Latest Patents

One of Kuanglei Chen's notable patents is titled "Preparation method and use of two-dimensional MoS2 materials." This patent outlines a preparation method that utilizes molybdenum source and sulfur powder as raw materials, with inert gas serving as the carrier gas. The process involves an intermediate evaporation stage, where the raw materials are transported to a molten glass surface and deposited into solid molybdenum sulfide. Through a series of etching, spreading, sulfurization, and precipitation processes, ultra-high quality and ultra-large area MoS2 single-crystal domains are produced under normal pressure and without hydrogenation. The resulting single-crystal domain size can reach 1.5 cm, which can further grow into a wafer-level 2D MoS2 material measuring 2 inches in size and 1-2 layers in thickness.

Career Highlights

Kuanglei Chen is affiliated with the University of Science and Technology Beijing, where he conducts his research and development activities. His work has garnered attention for its potential applications in electronics, optoelectronics, and other advanced technologies.

Collaborations

He collaborates with esteemed colleagues such as Yue Zhang and He Jiang, contributing to a dynamic research environment that fosters innovation and discovery.

Conclusion

Kuanglei Chen's contributions to the field of two-dimensional materials exemplify the spirit of innovation and research. His patent on the preparation of MoS2 materials showcases his expertise and commitment to advancing technology.