University of Science and Technology Beijing

Ruishan Li

Zheng Zhang

Chao Chen

He Jiang

Yue Zhang

Xiankun Zhang

Kuanglei Chen

Yu Geng

Xiaoyu He

Yihe Liu

A preparation method and a use of 2D MoSmaterials are provided. Molybdenum source and sulfur powder are used as raw materials, and inert gas is used as carrier gas. Through an intermediate evaporation process, the raw materials are transported to the molten glass surface and deposited into solid molybdenum sulfide. In the subsequent etching-spreading-sulfurization-precipitation process, ultra-high quality and ultra-large area MoSsingle-crystal domains are obtained under normal pressure and without hydrogenation. The single-crystal domain size of the prepared 2D MoSmaterial can reach 1.5 cm, and then grow into a wafer-level 2D MoSmaterial with a size of 2 inches and a thickness of 1-2 layers.

Preparation method and use of two-dimensional MoS2 materials

Growing community of inventors

Beijing, China

Ruishan Li