Shanghai, China

Ruiqi Jiang

This inventor holds 1 USPTO granted patent. Top assignee: Shanghai Institute of Technical Physics, Cas.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ruiqi Jiang. Retrieved from https://idiyas.com/inventor/ruiqi-jiang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Ruiqi Jiang and Short-Wave Infrared Detector Innovation.

Introduction

Ruiqi Jiang is an inventor based in Shanghai, China, associated with the Shanghai Institute of Technical Physics. Her patent work includes a short-wave infrared detector design that uses a photonic crystal structure to improve the detector’s absorption layer.

Latest Patents

Jiang is named on one patent: “Infrared Detector with Photonic Crystal over Absorption Layer and Preparation Method Therefor.” The invention describes a photonic crystal structure layer with multiple coupled topological defects arranged on the surface of an absorption layer. The layer includes periodically arranged through-holes filled with two different dielectric materials. The patent also covers a preparation method for the detector unit.

Career Highlights

Jiang’s documented patent activity focuses on infrared detector technology. Her work addresses the structure and fabrication of a short-wave infrared detector, combining an absorption layer with a patterned photonic crystal layer. Her record includes 1 patent.

Collaborations

Jiang’s listed coworkers include Fang Wang and Weida Hu. Her association with the Shanghai Institute of Technical Physics places her work within an institutional research setting focused on technical innovation.

Conclusion

Ruiqi Jiang’s patent presents a photonic-crystal-based approach to short-wave infrared detector design, highlighting her contribution to infrared sensing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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