The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Oct. 02, 2023
Shanghai Institute of Technical Physics, Cas, Shanghai, CN;
Fang Wang, Shanghai, CN;
Weida Hu, Shanghai, CN;
Haonan Ge, Shanghai, CN;
Runzhang Xie, Shanghai, CN;
Fuxing Dai, Shanghai, CN;
Ruiqi Jiang, Shanghai, CN;
Shanghai Institute of Technical Physics, CAS, Shanghai, CN;
Abstract
A short-wave infrared detector unit device and a preparation method therefor are provided, which belongs to the technical field of infrared detectors. A photonic crystal structure layer with multi-coupled topological defects is arranged on a surface of an absorption layer. The photonic crystal structure layer with multi-coupled topological defects is a third dielectric material layer with a through-hole structure. The third dielectric material layer is provided with first through holes in periodic arrangement and second through holes in periodic arrangement. The first through holes are filled with a first dielectric material, and the second through holes are filled with a second dielectric material.