This inventor holds 1 USPTO granted patent. Top assignee: Industrial Technology Research Institute. Active years: 2003.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2003
Title: Innovations by Ruey-Cheng Huang
Introduction
Ruey-Cheng Huang is a notable inventor based in Taichung, Taiwan. He has made significant contributions to the field of ceramic substrate technology. His innovative approach has led to advancements that enhance the performance of electronic materials.
Latest Patents
One of Ruey-Cheng Huang's key patents is titled "Planarization of ceramic substrates using porous materials." This invention introduces a concept of utilizing porous materials for the planarization of ceramic substrates. The planarized substrate consists of a ceramic substrate, a buffer layer, and a nanostructure layer. The ceramic substrate provides structural strength and surface-mount capability. The buffer layer ensures adhesion between the substrate and the nanostructure layer. The nanostructure layer is crucial for achieving the required surface smoothness of the ceramic substrates, which is essential for thin-film processing techniques. Additionally, it enhances adhesion for metallization and electronic materials. Ruey-Cheng Huang holds 1 patent.
Career Highlights
Ruey-Cheng Huang is affiliated with the Industrial Technology Research Institute, where he continues to innovate and contribute to research in his field. His work has been instrumental in advancing technologies related to ceramic substrates.
Collaborations
Some of his notable coworkers include Geoffrey Wen-Tai Shuy and Jong-Hong Lu. Their collaborative efforts have further enriched the research environment and fostered innovation.
Conclusion
Ruey-Cheng Huang's contributions to the field of ceramic substrate technology exemplify the impact of innovative thinking in advancing electronic materials. His work continues to influence the industry and inspire future developments.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
