Hsinchu, Taiwan

Ruei-Ping Lin

USPTO Granted Patents = 3 

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2022-2024

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3 patents (USPTO):Explore Patents

Title: Innovations of Ruei-Ping Lin in Semiconductor Technology

Introduction

Ruei-Ping Lin is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of three patents. His work focuses on enhancing semiconductor structures, which are crucial for modern electronic devices.

Latest Patents

One of Ruei-Ping Lin's latest patents involves source/drain features in semiconductor structures. This patent describes a semiconductor structure that includes a first plurality of channel members over a backside dielectric layer, along with a second plurality of channel members. It features a first gate structure that wraps around each of the first plurality of channel members and a second gate structure for the second plurality. Additionally, it includes a through-substrate contact that extends between the two sets of channel members, situated between the first and second gate structures, and through the backside dielectric layer.

Career Highlights

Ruei-Ping Lin is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this company has allowed him to develop innovative solutions that advance semiconductor technology.

Collaborations

Ruei-Ping Lin has collaborated with notable colleagues such as Kai-Di Tzeng and Chen-Ming Lee. These collaborations have contributed to the development of cutting-edge semiconductor technologies.

Conclusion

Ruei-Ping Lin's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His work continues to impact the advancement of electronic devices and semiconductor structures.

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