Ruei-Cheng Shiu

Title: Ruei-Cheng Shiu: Innovator in Metallization Techniques

Introduction

Ruei-Cheng Shiu is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor manufacturing, particularly in metallization techniques. With a total of 2 patents to his name, Shiu's work has had a notable impact on the industry.

Latest Patents

One of Ruei-Cheng Shiu's latest patents focuses on a metallization layer and fabrication method. This innovation involves forming a second metal structure, such as a metal plug, over a first metal structure, like a metal line. The process entails causing metal material from the first metal structure to migrate into an opening in a dielectric layer above it. The metal material, which may be copper, undergoes a reduction in density as it oxidizes. Migration is induced using gases that alternately oxidize and reduce the metal material. Over multiple cycles, the metal material migrates into the opening, with some embodiments allowing the migrated metal material to partially or completely fill the opening.

Career Highlights

Ruei-Cheng Shiu is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His expertise in metallization techniques has positioned him as a valuable asset to the company.

Collaborations

Shiu has collaborated with notable colleagues, including I-Che Lee and Huai-Ying Huang. Their combined efforts contribute to advancements in semiconductor technology.

Conclusion

Ruei-Cheng Shiu's innovative work in metallization techniques exemplifies the importance of research and development in the semiconductor industry. His contributions continue to shape the future of technology.