Los Gatos, CA, United States of America

Ru Ying Tong

This inventor holds 14 USPTO granted patents and 2 EPO patents. Top assignees: Headway Technologies, Incorporated, Magic Technologies, Inc.. Active years: 2003-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ru Ying Tong. Retrieved from https://idiyas.com/inventor/ru-ying-tong-d7e9c6nm

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 85.7

 

Average Co-Inventor Count = 4.0

ph-index = 6

Forward Citations = 227(Granted Patents)


Location History:

  • San Jose, CA (US) (2003 - 2004)
  • Los Gatos, CA (US) (2013 - 2016)

Company Filing History:


Years Active: 2003-2016

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14 patents (USPTO):Explore Patents

Title: Innovations of Ru Ying Tong in Magnetic Device Applications

Introduction

Ru Ying Tong is a prominent inventor based in Los Gatos, CA, known for his significant contributions to the field of magnetic device applications. With a total of 14 patents to his name, he has made remarkable advancements in the development of materials and technologies that enhance the performance of magnetic devices.

Latest Patents

One of Ru Ying Tong's latest patents focuses on Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications. This invention describes a magnetic tunnel junction (MTJ) for a spintronic device that includes a thin seed layer designed to enhance perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni) composition, where n ranges from 2 to 30. The seed layer is preferably made of materials such as NiCr, NiFeCr, Hf, or a composite thereof, with a thickness ranging from 10 to 100 Angstroms. Additionally, a magnetic layer like CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and a (100) MgO tunnel barrier. The invention also suggests the inclusion of a Ta insertion layer between the CoFeB layer and the laminated layer to promote (100) crystallization in the CoFeB layer. This laminated layer can be utilized as a free layer in an MTJ, and annealing between 300°C and 400°C may be employed to further enhance PMA in the laminated layer.

Another patent by Ru Ying Tong also addresses Co/Ni multilayers with improved out-of-plane anisotropy for a domain wall motion device. Similar to the previous invention, it includes a thin seed layer that enhances PMA in an overlying laminated layer with a (Co/Ni) composition. The same materials and configurations are suggested, emphasizing the versatility and applicability of his innovations in various magnetic device contexts.

Career Highlights

Throughout his career, Ru Ying Tong has worked with notable companies such as Headway Technologies, Incorporated and Magic Technologies, Inc. His experience in these organizations has allowed him to refine his expertise and contribute to cutting-edge research and development in magnetic technologies.

Collaborations

Ru Ying Tong has collaborated with several professionals in his field, including Guenole Jan and

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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