Orinda, CA, United States of America

Roya Maboudian

This inventor holds 4 USPTO granted patents and 1 published patent application. Top assignee: University of California. Active years: 2000-2020.

USPTO Granted Patents = 4 

% Patents Active = 75.0

Average Co-Inventor Count = 3.9

ph-index = 3

Forward Citations = 42(Granted Patents)


Company Filing History:


Years Active: 2000-2020

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4 patents (USPTO):Explore Patents

Title: Innovations of Roya Maboudian

Introduction

Roya Maboudian is a prominent inventor based in Orinda, California. She has made significant contributions to the field of semiconductor technology and gas detection systems. With a total of 4 patents, her work has advanced the capabilities of low-temperature sensors and materials.

Latest Patents

One of her latest patents focuses on the in-situ localized growth of porous metal oxide films on a microheater platform for low-temperature gas detection. This solid-state, low-power microheater sensor platform is configurable with selected metal oxide films for specific gas sensing applications. The sensor platform is designed by selecting a chemiresistive or catalytic material suitable for detecting a desired gas, followed by the formation of a porous nanostructured film on the designated surfaces of the microheater platform. The patent also describes methods for creating a highly porous, nanostructured metal oxide film in a controlled location from a liquid precursor using a localized heat source. By fast annealing deposited liquid precursors with the microheater, a highly porous, nanocrystalline metal oxide film can be generated in-situ and locally on the sensor platform.

Another notable patent involves the low-temperature formation of polycrystalline semiconductor films via enhanced metal-induced crystallization. This method allows for the formation of polycrystalline semiconductor film from amorphous semiconductor film at reduced temperatures and accelerated rates. The inclusion of a small percentage of semiconductor material, such as 2% within the metal layer, significantly reduces the temperatures required for crystallization of the amorphous semiconductor by at least 50°C compared to using the metal layer without the semiconductor material. This innovative approach is suitable for low-temperature substrates, such as glass and plastic, as well as various integrated circuit and MEMS fabrication devices.

Career Highlights

Roya Maboudian is affiliated with the University of California, where she continues to contribute to research and development in her field. Her work has garnered attention for its practical applications and innovative methodologies.

Collaborations

She has collaborated with notable colleagues, including Roger T Howe and Michael R Houston, further enhancing the impact of her research through teamwork and shared expertise.

Conclusion

Roya Maboudian's contributions to semiconductor technology and gas detection systems exemplify her innovative spirit and dedication to advancing scientific knowledge. Her patents reflect a commitment to developing practical solutions for modern

Profile summary based on public USPTO records.
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