The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2011
Filed:
Dec. 31, 2009
Roya Maboudian, Orinda, CA (US);
Frank W. Delrio, Chevy Chase, MD (US);
Joanna Lai, Santa Clara, CA (US);
Tsu-jae King Liu, Fremont, CA (US);
Roya Maboudian, Orinda, CA (US);
Frank W. DelRio, Chevy Chase, MD (US);
Joanna Lai, Santa Clara, CA (US);
Tsu-Jae King Liu, Fremont, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
A method for forming polycrystalline semiconductor film from amorphous semiconductor film at reduced temperatures and/or accelerated rates. The inclusion of a small percentage of semiconductor material, such as 2% within the metal layer, reduces the temperatures required for crystallization of the amorphous semiconductor by at least 50° C. in comparison to the use of the metal layer without the small percentage of semiconductor material. During a low temperature isothermal annealing process adjacent Al-2% Si and a-Si films undergo a layer exchange resulting in formation of a continuous polycrystalline silicon film having good physical and electrical properties. Formation of polycrystalline-semiconductor in this manner is suitable for use with low temperature substrates (e.g., glass, plastic) as well as with numerous integrated circuit and MEMs fabrication devices and practices.