Cupertino, CA, United States of America

Roy E Scheurelein

This inventor holds 1 USPTO granted patent. Top assignee: Sandisk 3D LLC. Active years: 2010.


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2010

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1 patent (USPTO):Explore Patents

Title: Roy E. Scheurelein: Innovator in Memory Technology

Introduction

Roy E. Scheurelein is a notable inventor based in Cupertino, CA (US), recognized for his contributions to memory technology. He holds a patent that showcases his innovative approach to enhancing memory arrays, making them more efficient and effective.

Latest Patents

Scheurelein's patent, titled "Memory with high dielectric constant antifuses adapted for use at low voltage," presents a groundbreaking method for creating smaller memory cells. This invention utilizes antifuse materials with a higher dielectric constant, allowing for programming at lower voltages. The use of diode materials with a lower band gap than silicon further enhances the performance and longevity of these memory arrays. Specifically, materials such as hafnium silicon oxynitride and germanium are highlighted for their effectiveness in this application. His patent is a significant advancement in the field of memory technology.

Career Highlights

Roy E. Scheurelein is currently associated with Sandisk 3D LLC, where he continues to push the boundaries of memory technology. His work has led to the development of memory arrays that not only operate efficiently but also have extended lifetimes due to the innovative materials used.

Collaborations

Throughout his career, Scheurelein has collaborated with esteemed colleagues, including Feng Li and Albert T. Meeks. These partnerships have contributed to the advancement of technology in the field of memory systems.

Conclusion

Roy E. Scheurelein's innovative work in memory technology, particularly his patent on high dielectric constant antifuses, marks him as a significant figure in the industry. His contributions continue to influence the development of more efficient memory systems.

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