Rouying Zhan

Title: Innovations of Rouying Zhan in Semiconductor Technology

Introduction

Rouying Zhan is a notable inventor based in Chandler, AZ (US). He has made significant contributions to the field of semiconductor technology. His work focuses on the development of semiconductor devices and methods for their manufacturing.

Latest Patents

Rouying Zhan holds 1 patent for his innovative work. His patent, titled "Semiconductor devices and methods of manufacturing semiconductor devices," describes a semiconductor device that includes a region of semiconductor material with a buried doped region of a first conductivity type. The device features a first well region of the first conductivity type that is electrically coupled to the buried doped region. Additionally, it includes a second well region of a second conductivity type with a first peak dopant concentration and a third well region that abuts the edges of the second well region. This third well region is interposed between the first and second well regions and has a second peak dopant concentration that differs from the first. The semiconductor device can be configured as a semiconductor-controlled rectifier (SCR) ESD device, where the controlling mechanisms for DC breakdown voltage and holding voltage are decoupled.

Career Highlights

Rouying Zhan is currently employed at Semiconductor Components Industries, LLC. His work has been instrumental in advancing semiconductor technology and improving device performance.

Collaborations

He collaborates with fellow inventor Yupeng Chen, contributing to the innovative environment at their workplace.

Conclusion

Rouying Zhan's contributions to semiconductor technology exemplify the importance of innovation in this field. His patent reflects a deep understanding of semiconductor devices and their manufacturing processes.