This inventor holds 1 USPTO granted patent. Top assignee: Dalian University of Technology. Active years: 2026.
Company Filing History:
2 out of 551 Years Active: 2026
Title: Innovations of Rongchun Chen in Half-Heusler Alloys
Introduction
Rongchun Chen is a notable inventor based in Dalian, China. He has made significant contributions to the field of materials science, particularly in the development of half-Heusler alloys. His work focuses on the preparation methods and applications of these advanced materials.
Latest Patents
Rongchun Chen holds a patent for a method of preparing a P-type ZrCoSb-based half-Heusler single crystal alloy. The patent, titled "Method for preparing a P-type ZrCoSb-based half-Heusler single crystal alloy with a chemical composition of ZrCoSb1-xSnx by vertical bridgman directional crystallization," outlines a process that involves smelting alloy raw materials under a protective atmosphere. This process results in a half-Heusler polycrystalline alloy ingot, which is then subjected to vertical Bridgman directional crystallization to obtain the desired single crystal alloy. The chemical composition of the alloy includes ZrCoSbSn, with the variable x ranging from 0.1 to 0.3, and it possesses an MgAgAs-type crystal structure.
Career Highlights
Rongchun Chen is affiliated with Dalian University of Technology, where he conducts research and development in materials science. His innovative approach to alloy preparation has garnered attention in academic and industrial circles. His work contributes to advancements in thermoelectric materials and energy conversion technologies.
Collaborations
Due to space constraints, the collaborations section will be omitted.
Conclusion
Rongchun Chen's contributions to the field of half-Heusler alloys exemplify the importance of innovation in materials science. His patented methods pave the way for future advancements in thermoelectric applications.