The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2026

Filed:

Oct. 16, 2023
Applicants:

Dalian University of Technology, Dalian City, CN;

Ningbo Inst. of Dalian University of Technology, Ningbo City, CN;

Inventors:

Huijun Kang, Dalian City, CN;

Rongchun Chen, Dalian City, CN;

Tongmin Wang, Dalian City, CN;

Enyu Guo, Dalian City, CN;

Zongning Chen, Dalian City, CN;

Tingju Li, Dalian City, CN;

Zhiqiang Cao, Dalian City, CN;

Yiping Lu, Dalian City, CN;

Jinchuan Jie, Dalian City, CN;

Yubo Zhang, Dalian City, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C30B 11/02 (2006.01); C30B 11/00 (2006.01); C30B 29/52 (2006.01);
U.S. Cl.
CPC ...
C30B 11/02 (2013.01); C30B 11/006 (2013.01); C30B 29/52 (2013.01);
Abstract

Provided are a P-type ZrCoSb-based half-Heusler single crystal alloy and a preparation method thereof. The method for preparing the P-type ZrCoSb-based half-Heusler single crystal alloy includes: subjecting alloy raw materials to smelting under a first protective atmosphere to obtain a half-Heusler polycrystalline alloy ingot, the alloy raw materials corresponding to a chemical composition of the P-type ZrCoSb-based half-Heusler single crystal alloy; and subjecting the half-Heusler polycrystalline alloy ingot to vertical Bridgman directional crystallization under a second protective atmosphere to obtain the P-type ZrCoSb-based half-Heusler single crystal alloy. The P-type ZrCoSb-based half-Heusler single crystal alloy has the chemical composition of ZrCoSbSn, x in the ZrCoSbSnbeing in a range of 0.1≤x≤0.3; and the P-type ZrCoSb-based half-Heusler single crystal alloy has an MgAgAs-type crystal structure.


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