Rong-Ting Liou

Title: The Innovative Contributions of Rong-Ting Liou

Introduction

Rong-Ting Liou is a notable inventor based in Malta, NY (US), recognized for his contributions to integrated circuit (IC) technology. With a focus on trench isolation structures, his work has significant implications for the semiconductor industry.

Latest Patents

Liou holds a patent for "Trench isolation having three portions with different materials, and LDMOS FET including same." This innovative IC structure features a trench isolation in a substrate composed of three portions made from different dielectric materials. The design includes a lower portion with a first dielectric material and a specific width, a middle portion that combines the first dielectric material with an outer second dielectric material, and an upper portion made of a third dielectric material with a greater width than the lower portion. The distinct dielectric materials enhance the performance and efficiency of the IC.

Career Highlights

Liou is currently employed at GlobalFoundries U.S. Inc., a leading semiconductor manufacturer. His work at the company has positioned him as a key player in advancing IC technology, particularly in the area of trench isolation.

Collaborations

Liou has collaborated with notable colleagues, including Man Gu and Jeffrey Bowman Johnson, contributing to various projects that push the boundaries of semiconductor innovation.

Conclusion

Rong-Ting Liou's inventive work in trench isolation technology exemplifies the critical advancements in the semiconductor field. His contributions continue to influence the development of more efficient integrated circuits.