Thousand Oaks, CA, United States of America

Ronald W Grant


Average Co-Inventor Count = 2.0

ph-index = 2

Forward Citations = 26(Granted Patents)


Company Filing History:


Years Active: 1989-1991

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2 patents (USPTO):Explore Patents

Title: Ronald W. Grant: Innovator in Semiconductor Technology

Introduction

Ronald W. Grant, based in Thousand Oaks, California, is a notable inventor with a focus on semiconductor technologies. With two patents to his name, he has made significant contributions to the field, displaying innovation and expertise that have broad implications for the future of electronics.

Latest Patents

One of Grant's latest inventions is focused on the Schottky barrier height for metal contacts to III-V semiconductors. This patent presents a metal to semiconductor contact featuring a Schottky barrier height of approximately 1 eV, which remains independent of the contact metal used. The method involves depositing metals such as gold (Au), chromium (Cr), or titanium (Ti) on a heavily doped p-type silicon layer that measures between 15 to 30 angstroms thick. An interface layer is then deposited on gallium arsenide, enhancing the contact quality.

Another significant patent by Grant is for nonalloyed ohmic contacts for n-type gallium arsenide. This invention comprises a multi-layered nonalloyed ohmic contact structure designed specifically for n-type gallium arsenide. It includes a layer of germanium or silicon, approximately 10 angstroms thick, evaporated onto the gallium arsenide substrate. Over this layer, a diffusion barrier of material, ranging from 100 to 200 angstroms thick, is applied, chosen from non-metallic conducting compounds including metal compounds.

Career Highlights

Throughout his career, Ronald W. Grant has worked with various reputable organizations, including the United States of America as represented by the Secretary of the Air Force and Rockwell International Corporation. His experiences in these influential companies have shaped his innovative ideas and led to remarkable inventions in the semiconductor domain.

Collaborations

Grant has also collaborated with James R. Waldrop, reflecting a synergistic partnership that has bolstered their respective contributions to semiconductor technology. This collaboration underscores the importance of teamwork and shared expertise in advancing innovation within the field.

Conclusion

In summary, Ronald W. Grant is an accomplished inventor whose work on semiconductor technologies has the potential to drive significant advancements in electronic performance and reliability. His patents not only highlight his individual talent but also contribute to a deeper understanding of semiconductor mechanics, paving the way for future innovations.

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