The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 1989
Filed:
Jan. 27, 1988
Applicant:
Inventors:
James R Waldrop, Thousand Oaks, CA (US);
Ronald W Grant, Thousand Oaks, CA (US);
Assignee:
Rockwell International Corporation, El Segundo, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
428641 ; 148D / ; 148D / ; 428620 ; 437 39 ; 437176 ; 437177 ;
Abstract
The invention is a layered nonalloyed ohmic contact structure for use on n type gallium arsenide including a layer of germanium or silicon of the order of 10 .ANG. thick evaporated onto the gallium arsenide; a diffusion barrier layer of material 100-200 .ANG. thick over the germanium or silicon selected from non-metallic conducting compounds, including metal compounds of