United States of America As Represented by the Secretary of the Air Force

Rockwell International Corporation

Ronald W Grant

James R Waldrop

A metal to semiconductor contact is provided wherein the Schottky barrier ight is about 1 eV and independent of the contact metal. The metal, such as Au, Cr, or Ti, is deposited on a heavily doped p-type layer of silicon which is about 15 to 30 angstroms thick. The interface layer is deposited on gallium arsenide.

Schotiky barrier height for metal contacts to III-V semiconductor

The invention is a layered nonalloyed ohmic contact structure for use on n type gallium arsenide including a layer of germanium or silicon of the order of 10 .ANG. thick evaporated onto the gallium arsenide; a diffusion barrier layer of material 100-200 .ANG. thick over the germanium or silicon selected from non-metallic conducting compounds, including metal compounds of

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Thousand Oaks, CA, United States of America

Ronald W Grant