Palo Alto, CA, United States of America

Ronald P Reade

This inventor holds 1 USPTO granted patent. Top assignee: Applied Materials, Inc.. Active years: 1986.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ronald P Reade. Retrieved from https://idiyas.com/inventor/ronald-p-reade-dht8twmb

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 25(Granted Patents)


Company Filing History:


Years Active: 1986

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Innovative Contributions of Ronald P. Reade in Plasma Etching Technology

Introduction: Ronald P. Reade, a notable inventor based in Palo Alto, California, has made significant contributions to the field of semiconductor manufacturing. With a focus on enhancing processes within this domain, his inventive work is particularly recognized for its impact on plasma etching technology.

Latest Patents: Ronald holds a patent for an innovative method titled "In-situ photoresist capping process for plasma etching." This two-step process enhances the etch resistance of photoresist during the chlorinated plasma etching of silicon-containing materials. The process involves exposing the photoresist to a chlorinated plasma, which creates a silicon-chlorine containing material on its surface. Following this, the freshly formed layer is treated with an oxidizing plasma containing a chlorine etching species, allowing for the selective oxidation of the capping layer. This advancement underlines the importance of precision in semiconductor fabrication.

Career Highlights: Ronald P. Reade is associated with Applied Materials, Inc., a leading company in the manufacturing of equipment and technology for the semiconductor industry. His work there emphasizes the intersection of innovation and practical application in complex engineering processes. Ronald’s patent showcases not only his inventive skills but also his commitment to improving industry practices.

Collaborations: Throughout his career, Ronald has worked alongside esteemed colleagues such as Simon W. Tam and Jerry Yuen Wong. These collaborations have fostered an environment of innovation which is pivotal in the fast-evolving field of semiconductor technology.

Conclusion: Ronald P. Reade's contributions to the development of advanced plasma etching processes demonstrate his role as a critical inventor in the semiconductor industry. His patent signifies a remarkable advancement in etch resistance methods, reflecting not only his individual expertise but also the collaborative efforts within his field. As technology progresses, the impact of such innovations becomes increasingly vital, ensuring that industries can effectively meet growing demands.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…