The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 1986
Filed:
May. 20, 1985
Applicant:
Inventors:
Simon W Tam, San Francisco, CA (US);
Ronald P Reade, Palo Alto, CA (US);
Jerry Y Wong, Union City, CA (US);
David N Wang, Cupertino, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; B44C / ; C03C / ; B05D / ;
U.S. Cl.
CPC ...
156643 ; 156646 ; 156657 ; 1566591 ; 156662 ; 156904 ; 20419215 ; 20419232 ; 252 791 ; 427 38 ; 430313 ;
Abstract
A two-step photoresist capping process for enhancing the etch resistance of photoresist during chlorinated plasma etching of silicon-containing materials comprises exposing the photoresist to a chlorinated plasma to form a silicon-chlorine containing material on the photoresist, and then exposing the resulting layer to an oxidizing plasma containing a chlorine etching species to selectivity oxidize the capping layer.