The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 1986
Filed:
May. 20, 1985
Simon W Tam, San Francisco, CA (US);
Ronald P Reade, Palo Alto, CA (US);
Jerry Y Wong, Union City, CA (US);
David N Wang, Cupertino, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A two-step photoresist capping process for enhancing the etch resistance of photoresist during chlorinated plasma etching of silicon-containing materials comprises exposing the photoresist to a chlorinated plasma to form a silicon-chlorine containing material on the photoresist, and then exposing the resulting layer to an oxidizing plasma containing a chlorine etching species to selectivity oxidize the capping layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile