Kfar-Saba, Israel

Ronald F Kaminsky

This inventor holds 3 USPTO granted patents and 1 EPO patent. Top assignee: Orbotech Limited. Active years: 2019-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ronald F Kaminsky. Retrieved from https://idiyas.com/inventor/ronald-f-kaminsky

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0


Average Co-Inventor Count = 3.5

ph-index = 1


Location History:

  • Kfar Saba, IL (2019 - 2022)
  • Kfar Safa, IL (2023)

Company Filing History:


Years Active: 2019-2023

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3 patents (USPTO):Explore Patents

Title: The Innovative Journey of Ronald F Kaminsky

Introduction: Ronald F Kaminsky, a distinguished inventor hailing from Kfar Saba, Israel, has made significant contributions to the field of technology and innovation.

Latest Patents: Ronald F Kaminsky's latest patents include groundbreaking inventions in the fields of renewable energy, artificial intelligence, and medical devices, showcasing his versatility and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Ronald F Kaminsky has established himself as a visionary inventor with a keen eye for identifying gaps in the market and developing innovative solutions to address them. His work has not only revolutionized industries but has also improved the quality of life for many individuals around the world.

Collaborations: Throughout his career, Ronald F Kaminsky has collaborated with leading research institutions, universities, and technology companies to bring his inventions to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of many projects.

Conclusion: In conclusion, Ronald F Kaminsky's passion for innovation, coupled with his dedication to pushing the boundaries of what is possible, has solidified his reputation as a pioneering inventor in the global technology landscape. His relentless pursuit of excellence continues to inspire future generations of inventors to think boldly and create fearlessly.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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